Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• heterojunction; armchair boron nitride nanoribbon (ABNNR); armchair graphene nanoribbon (AGNR); negative differential resistance (NDR); nonequilibrium Green’s function (NEGF); resonant tunneling diode (RTD); substitutional defects; Introduction 2D materials have gained tremendous research interest due to the

A carrier velocity model for electrical detection of gas molecules

• Ali Hosseingholi Pourasl,
• Sharifah Hafizah Syed Ariffin,
• Mohammad Taghi Ahmadi,
• Razali Ismail and
• Niayesh Gharaei

Beilstein J. Nanotechnol. 2019, 10, 644–653, doi:10.3762/bjnano.10.64

• remarkable changes in their electrical characteristics when exposed to different gases through molecular adsorption. In this paper, the adsorption effects of the target gas molecules (CO and NO) on the electrical properties of the armchair graphene nanoribbon (AGNR)-based sensor are analytically modelled

• between the proposed model and first principles method showed an acceptable agreement between the results. Therefore, the proposed models in this research can be used to develop modern sensors based on the new materials. Illustration of the gas molecule adsorption on the armchair graphene nanoribbon (AGNR

• ) unit cell. Carrier velocity versus carrier concentration in armchair graphene nanoribbon (AGNR). Illustration of the gas sensor with the 8-AGNR FET platform. The structure consists of the left and right electrode and the channel region in the middle with a metal back gate. Orientation of CO and NO gas

High I_on/I_off current ratio graphene field effect transistor: the role of line defect

• Mohammad Hadi Tajarrod and
• Hassan Rasooli Saghai

Beilstein J. Nanotechnol. 2015, 6, 2062–2068, doi:10.3762/bjnano.6.210

• Mohammad Hadi Tajarrod Hassan Rasooli Saghai Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran 10.3762/bjnano.6.210 Abstract The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the